Amorphous and Crystalline Silicon Carbide II: Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15―16, 1988 (Springer Proceedings in Physics)

This comprehensive survey presents the latest results of studies of SiC in its amorphous, polycrystalline and microcrystalline forms. New methods of preparation and characterization are explained and devices and applications described, for example: - excimer laser processing of SiC - low temperature epitaxial growth of cubic SiC using a gas source MBE process - the use of NaOH-KOH eutectic etching to reveal crystalline defects in -SiC - results of investigations of microstructure and interfaces of a-SiC with c-SiC - new devices: SiC MOSFETs and buried gate JFETs - blue LEDs using 6H-SiC bulk crystals - a new process for SiC/Si HBTs - high operating-temperature and opto-electronic applications The newly emerging technology of diamond thin films is also discussed.