Power Semiconductor Devices and Circuits (Asea Brown Boveri Symposia)

Proceedings of an international symposium held in Baden-Dattwil, Switzerland, in September 1991. Papers are divided into four sections: modern power devices, simulation, circuits and control concepts, and future trends. Among the topics are the MOS controlled thyristor, high-power reverse conditioning GTO, power device concepts, tool integration for power device modeling, CAD tools in power device optimization, the limit of stable device behavior, and intelligent power integrated circuits. Annotation copyright Book News, Inc. Portland, Or.