Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices | EKB DL

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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

Description

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Keywords

Technology & EngineeringMaterials ScienceElectronicsElectrical

1998Book

Author(s)E. L. Gusev

PublisherSpringer Science & Business Media

ISBN9780792350071

LanguageEnglish

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